mimix broadband's three stage 27.0-32.0 ghz gaas mmic power amplifier has a small signal gain of 22.0 db with +33 dbm saturated output power. this mmic uses mimix broadband?s 0.15 m gaas phemt device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. the chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. this device is well suited for millimeter-wave point-to-point radio, lmds, satcom and vsat applications. 27.0-32.0 ghz gaas mmic power amplifier ka-band 2w power amplifier 22.0 db small signal gain +33.0 dbm saturated output power +40.0 dbm output third order intercept (oip3) 100% on-wafer rf, dc and output power testing 100% visual inspection to mil-std-883 method 2010 features general description electrical characteristics (ambient temperature t = 25 o c) parameter frequency range (f ) input return loss (s11) output return loss (s22) small signal gain (s21) gain flatness ( s21) reverse isolation (s12) saturated output power (psat) drain bias voltage (vd1,2,3) gate bias voltage (vg1,2,3) supply current (id1) (vd=5.0v, vg=-0.7v typical) supply current (id2) (vd=5.0v, vg=-0.7v typical) supply current (id3) (vd=5.0v, vg=-0.7v typical) units ghz db db db db db dbm vdc vdc ma ma ma min. 27.0 - - - - - - - -1.2 - - - typ. - 10.0 15.0 22.0 +/-1.0 50.0 +33.0 +5.0 -0.9 100 250 550 max. 32.0 - - - - - - +6.0 0.0 150 350 750 absolute maximum ratings supply voltage (vd) supply current (id1,2,3) gate bias voltage (vg) input power (pin) storage temperature (tstg) operating temperature (ta) channel temperature (tch) +6.5 vdc 165,415,790 ma +0.3 vdc tbd -65 to +165 o c -55 to mttf table mttf table chip device layout page 1 of 5 1 (1) channel temperature affects a device's mttf. it is recommended to keep channel temperature as low as possible for maximum life. 1 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. february 2006 - rev 23-feb-07 p1026-bd
power amplifier measurements page 2 of 5 27.0-32.0 ghz gaas mmic power amplifier mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. february 2006 - rev 23-feb-07 p1026-bd 25 26 27 28 29 30 31 32 33 34 35 frequency (ghz) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 s-parameters 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 26 27 28 29 30 31 32 33 frequency (g hz) output power (dbm) vd = 5.0 v vd = 5.5 v vd = 6.0 v 0 100 200 300 400 500 600 700 800 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 output pow er (dbm) drain current id1, id2 and id3 (ma ) id1 at 5 .0 v id1 at 5.5 v id1 a t 6.0 v id2 at 5 .0 v id2 at 5.5 v id2 a t 6.0 v id3 at 5 .0 v id3 at 5.5 v id3 a t 6.0 v 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 output power (dbm ) pae ( %) a nd ga in (db) pa e at 5. 0 v pa e at 5. 5 v pa e at 6. 0 v gai n at 5.0 v gai n at 5.5 v gai n at 6.0 v ga in pae 35 36 37 38 39 40 41 42 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 output power per t one (dbm) average o ip3 (db m) 28 g hz 29 g hz 30 g hz 31 g hz 32 g hz
1 2 3 4 5 6 7 8 9 10 11 12 13 14 rf in rf out vg3 vg2 vg1 vd1 vd2 vd3 2.00 (0.079) 1 2 3 4 5 6 7 8 9 10 11 12 13 0.82 (0.032) 1.22 (0.048) 1.62 (0.064) 2.42 (0.095) 3.22 (0.127) 2.82 (0.111) 2.42 (0.095) 1.62 (0.064) 1.22 (0.048) 0.82 (0.032) 0.0 0.0 1.00 (0.039) 14 2.82 (0.111) 3.22 (0.127) 1.00 (0.039) 3.70 (0.146) mechanical drawing bias arrangement bypass capacitors - see app note [2] (note: engineering designator is 30spa0553) units: millimeters (inches) bond pad dimensions are shown to center of bond pad. thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), backside is ground, bond pad/backside metallization: gold all dc bond pads are 0.100 x 0.100 (0.004 x 0.004). all rf bond pads are 0.100 x 0.200 (0.004 x 0.008) bond pad centers are approximately 0.109 (0.004) from the edge of the chip. dicing tolerance: +/- 0.005 (+/- 0.0002). approximate weight: 4.588 mg. bond pad #1 (rf in) bond pad #2 (vg1a) bond pad #3 (vd1a) bond pad #4 (vg2a) bond pad #5 (vd2a) bond pad #6 (vg3a) bond pad #7 (vd3a) bond pad #8 (rf out) bond pad #9 (vd3b) bond pad #10 (vg3b) bond pad #11 vd2b) bond pad #12 (vg2b) bond pad #13 (vd1b) bond pad #14 (vg1b) page 3 of 5 27.0-32.0 ghz gaas mmic power amplifier mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. february 2006 - rev 23-feb-07 p1026-bd
app note [1] biasing - it is recommended to separately bias each amplifier stage vd1 through vd3 at vd(1,2,3)=5.0v with id1=100ma, id2=250ma, and id3=550ma. separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectific ation will alter the effective gate control voltage. for non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain current id(total)=1040 ma. it is also recommended to use active biasing to keep the currents constant as the rf power and tempe rature vary; this gives the most reproducible results. depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. the gate of the phemt is controlled to maintain correct drain current and thus drain voltage. the typical gate voltage needed to do this i s -0.7v. typically the gate is protected with silicon diodes to limit the applied voltage. also, make sure to sequence the applied voltage to ensure n egative gate bias is available before applying the positive drain supply. app note [2] bias arrangement - for parallel stage bias (recommended for general applications) -- the same as individual stage bias but all the drain or gate p ad dc bypass capacitors ( 100-200 pf) can be combined. additional dc bypass capacitance ( 0.01 uf) is also recommended to all dc or combinatio n (if gate or drains are tied together) of dc bias pads. all dc pads have been tied together on chip and can be biased from either side. for individual stage bias (recommended for saturated applications) -- each dc pad (vd1,2,3 and vg1,2,3) needs to have dc bypass capacitance ( 100-200 pf) as close to the device as possible. additional dc bypass capacitance ( 0.01 uf) is also recommended. all dc pads ha ve been tied together on chip and can be biased from either side. page 4 of 5 mttf table (tbd) backplate temperature 55 deg celsius 75 deg celsius 95 deg celsius channel temperature deg celsius deg celsius deg celsius fits e+ e+ e+ mttf hours e+ e+ e+ rth c/ w c/ w c/ w bias conditions: vd1=vd2=vd3=5.0v, id1=100ma, id2=250ma, id3=550ma these numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricati ng foundry. 27.0-32.0 ghz gaas mmic power amplifier mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. february 2006 - rev 23-feb-07 p1026-bd
page 5 of 5 27.0-32.0 ghz gaas mmic power amplifier mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. february 2006 - rev 23-feb-07 p1026-bd handling and assembly information part number for ordering description caution! - mimix broadband mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: do not ingest. do not alter the form of this product into a gas , powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. life support policy - mimix broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of mimix broadband. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to aff ect its safety or effectiveness. esd - gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. die attachment - gaas products from mimix broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. microstrip substrates should be brought as close to the die as possible. the mounting surface should be clean and flat. if using conductive epoxy, recommended epoxies are tanaka ts3332ld, die mat dm6030hk or dm6030hk-pt cured in a nitrogen atmosphere per manufacturer's cure schedule. apply epoxy sparingly to avoid getting any on to the top surface of the die. an epoxy fillet should be visible around the total die periphery. for additional information please see the mimix "epoxy specifications for bare die" application note. if eutectic mounting is preferred, then a fluxless gold-tin (ausn) preform, appr oximately 0.001 2 thick, placed between the die and the attachment surface should be used. a die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. the gold-t in eutectic (80% au 20% sn) has a melting point of approximately 280 oc (note: gold germanium should be avoided). the work station temperature should be 310 oc +/- 10 oc. exposure to these extreme temperatures should be kept to minimum. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. avoidance of air bridges and force impact are critical during placement. wire bonding - windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. the recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize rf port bond inductance. gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for dc bias connections. aluminum wire should be avoided. thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. bond force, time and ultrasonics are all critical parameters . bonds should be made from the bond pads on the die to the package or substrate. all bonds should be as short as possible. XP1026-BD-000V rohs compliant die packed in vacuum release gel packs xp1026-bd-ev1 xp1026-bd evaluation module
|
